Flyer: Dr. Charles H. Wallace
Title: The Role of Chemistry in Advanced Patterning of Semiconductor Devices
Abstract: The presentation will introduce lithography and advanced patterning to construct transistors and interconnects for semiconductor device manufacturing followed by a discussion of the various inorganic chemicals and materials used in the manufacturing process. Some of the key topics of discussion will include the scaling of transistors and the role of the minimum resolution of lithography equipment (Rayleigh’s equation). A summary of historical scaling will be reviewed and a description of future research and development that is required to continue scaling into the future. The importance of chemistry and impact of chemistry on the manufacturing process and applications will be described. The introduction of EUV (Extreme Ultraviolet) lithography into the semiconductor patterning process has enabled some simplification of process architecture; however, has not decreased edge-placement-error (EPE) margin enough to keep up with the pitch scaling requirements. Chemical selectivity is the most effective way to avoid EPE-caused failures on devices which lead to poor yield. Area Selective Deposition (ASD) solutions include development of self-assembled monolayers (SAMs) and selective ALD/CVD growth. Finally, the talk will conclude with a description of the careers available in the semiconductor device manufacturing industry with an emphasis on research and development at Intel Corporation.