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  4. Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre

Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre

2022-08-15 | Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre – Nat. Electron.  Ruixia Wu, Quanyang Tao, Jia Li, Wei Li, Yang Chen, Zheyi Lu, Zhiwen Shu, Bei Zhao, Huifang Ma, Zhengwei Zhang, Xiangdong Yang, Bo Li, Huigao Duan, Lei Liao, Yuan Liu, Xidong Duan & Xiangfeng Duan*.

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