Skip to content
UCLA
  • Contact Us
  • Internal
  • Feedback
  • About Us
    • Directory
    • Outreach
    • History
    • Visit
    • Contact Us
  • News
  • Events & Seminars
    • Upcoming Events
    • Past Events
    • Calendar
  • Faculty & Research
    • Faculty Directory
    • Research Facilities
    • Safety
    • Departmental Publications
  • Academic Programs
    • Undergraduate
    • Graduate
    • Postdoctoral
    • Instructional Division
    • Master of Applied Chemical Sciences
  • Alumni & Giving
    • Alumni Resources
(310) 825-4219
  1. Home>
  2. Recent Publications>
  3. Publications>
  4. Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion-Exchange Doping

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion-Exchange Doping

2026-04-04 | Resistance to Overdoping Allows Over 2000 S cm −1 Conductivity in P(g 3 BTTT) With Anion‐Exchange Doping – Adv. Mater. Hunger, B.; Horn, M. M.; Röck, E.; Villalva, D. R.; Bynens, L.; Vanderspikken, J.; Kousseff, C.; Gobeil, S.; Bardagot, O.; Akmanşen‐Kalayci, N.; Tolbert,* S. H.; McCulloch, I.; Maes, W.; Tsokkou, D.; Banerji, N.

Post navigation

Previous: Propellane Alkaloid Biosynthesis and Total Synthesis via Interrupted Reaction Pathways
Next: StochasticGW-GPU: Rapid Quasi-Particle Energies for Molecules beyond 10,000 Atoms
UCLA
  • (310) 825-4219
  • (310) 206-4038

University of California © 2026 UC Regents. All Rights Reserved.

607 Charles E. Young Drive East | Box 951569
Los Angeles, CA 90095-1569

Designed by Element26